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SK Hynix HMA81GS6AFR8N-UH 8GB DDR4 2133MHz PC4-17000 SODIMM

SKU

HMA81GS6AFR8N-UH

£51.48 £42.90

HMA81GS6AFR8N-UH SK Hynix 8GB DDR4 2133MHz PC4-17000 SODIMM Laptop Memory

8GB DDR4 2133MHz SODIMM
Stable and efficient memory upgrade
Improves multitasking and load times
Built for long-term reliability

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For most orders
over £99 *

30 Days Return

Return hassle
free

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100% secure
payment

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now

Tech Specs

Power
Memory voltage	1.2 V
Design
Backlight	No
Product colour	Green
Technical details
Product colour	Green
Country of origin	South Korea

Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 8 GB
Internal memory	8 GB
Component for	Laptop
Memory form factor	260-pin SO-DIMM
CAS latency	17
Memory voltage	1.2 V
Memory ranking	1
ECC	No
Memory clock speed	2400 MHz
Internal memory type	DDR4
Features
Buffered memory type	Unregistered (unbuffered)
Backlight	No
Product colour	Green
Memory layout (modules x size)	1 x 8 GB
Internal memory	8 GB
Component for	Laptop
Memory form factor	260-pin SO-DIMM
CAS latency	17
Memory voltage	1.2 V
Country of origin	South Korea
Memory ranking	1
ECC	No
Memory clock speed	2400 MHz
Internal memory type	DDR4
Memory data transfer rate	2400 MT/s
Other features
Country of origin	South Korea

Description

HMA81GS6AFR8N-UH Upgrade your notebook with SK Hynix 8GB DDR4 2133MHz RAM. Energy-efficient, reliable, and built for lasting performance.

Specifications

Power
Memory voltage	1.2 V
Design
Backlight	No
Product colour	Green
Technical details
Product colour	Green
Country of origin	South Korea

Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 8 GB
Internal memory	8 GB
Component for	Laptop
Memory form factor	260-pin SO-DIMM
CAS latency	17
Memory voltage	1.2 V
Memory ranking	1
ECC	No
Memory clock speed	2400 MHz
Internal memory type	DDR4
Features
Buffered memory type	Unregistered (unbuffered)
Backlight	No
Product colour	Green
Memory layout (modules x size)	1 x 8 GB
Internal memory	8 GB
Component for	Laptop
Memory form factor	260-pin SO-DIMM
CAS latency	17
Memory voltage	1.2 V
Country of origin	South Korea
Memory ranking	1
ECC	No
Memory clock speed	2400 MHz
Internal memory type	DDR4
Memory data transfer rate	2400 MT/s
Other features
Country of origin	South Korea